STN4438 n channel enhancement mode mosfet 8.2a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2008, stanson corp. STN4438 2009. v1 description STN4438 is the n-channel logic enhancement mode power field effect transistor which is produced using high cell density, dmos trench technology. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching. pin configuration sop-8 part marking y: year code a: process code feature l 60v/8.2a, r ds(on) = 25m (typ.) @v gs = 10v l 60v/7.6a, r ds(on) = 30m @v gs = 4.5v l super high density cell design for extremely low r ds(on) l exceptional on-resistance and maximum dc current capability l sop-8 package design pdf created with pdffactory pro trial version www.pdffactory.com
STN4438 n channel enhancement mode mosfet 8.2a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2008, stanson corp. STN4438 2009. v1 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical unit drain-source voltage vdss 60 v gate-source voltage vgss 20 v continuous drain current (tj=150 ) ta=25 ta=70 id 8.2 6.6 a pulsed drain current idm 40 a continuous source current (diode conduction) is 3.0 a power dissipation ta=25 ta=70 pd 3.1 2.0 w operation junction temperature tj 150 storgae temperature range tstg -55/150 thermal resistance-junction to ambient r ja 70 /w pdf created with pdffactory pro trial version www.pdffactory.com
STN4438 n channel enhancement mode mosfet 8.2a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2008, stanson corp. STN4438 2009. v1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drain-source breakdown voltage v (br)dss v gs =0v,id=250ua 60 v gate threshold voltage v gs(th) v ds =v gs ,id=250ua 1.0 3.0 v gate leakage current i gss v ds =0v,v gs = 20v 100 na v ds =48v,v gs =0v 1 zero gate voltage drain current i dss v ds =48v,v gs =0v t j =5 5 ua on-state drain current i d(on) v ds R 5v,v gs =10v 40 a drain-source on- resistance r ds(on) v gs =10v,i d =10a v gs =4.5v,i d =8a 25 30 30 35 m forward transconductance gfs v ds =5v,i d =6.2av 24 s diode forward voltage v sd i s =1a,v gs =0v 0.8 1.2 v dynamic total gate charge q g 48 58 gate-source charge q gs 24.2 30 gate-drain charge q gd v ds =30v,v gs =10v i d 8.2a 14.5 nc input capacitance c iss 1920 output capacitance c oss 155 reverse transfercapacitance c rss v ds ==30v,vgs=0v f=1mhz 116 pf 8.5 turn-on time t d(on) tr 6 29 turn-off time t d(off) tf v ds =30v,r l =3.6 v gen =3v 6 ns pdf created with pdffactory pro trial version www.pdffactory.com
STN4438 n channel enhancement mode mosfet 8.2a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2008, stanson corp. STN4438 2009. v1 pdf created with pdffactory pro trial version www.pdffactory.com
STN4438 n channel enhancement mode mosfet 8.2a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2008, stanson corp. STN4438 2009. v1 pdf created with pdffactory pro trial version www.pdffactory.com
STN4438 n channel enhancement mode mosfet 8.2a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2008, stanson corp. STN4438 2009. v1 package outline sop-8p pdf created with pdffactory pro trial version www.pdffactory.com
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